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| SMD Type NPN Switching Transistor PXT4401 Transistors Features High current (max. 600 mA) Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Symbol VCBO VCEO VEBO IC ICM IBM Ptot Total power dissipation *1 *2 *3 Tstg Tj Ramb Rth(j-a) Thermal resistance from junction to ambient *1 *2 *3 Rth(j-s) 250 156 113 30 K/W 0.5 0.8 1.1 -65 to +150 150 -65 to +150 W Rating 60 40 5 600 800 200 Unit V V V mA mA mA Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to soldering point K/W *1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard ------footprint. *2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting - -pad for collector 1 cm2. *3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -----pad for collector 6 cm2. www.kexin.com.cn 1 SMD Type PXT4401 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * collector-emitter saturation voltage * Symbol ICBO IEBO hFE VCEsat Testconditons IE = 0; VCB = 60 V IC = 0; VEB = 6 V VCE = 1 V, IC = 150 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage * Collector capacitance Emitter capacitance Transition frequency Turn-on time Delay time Rise time Turn-off time Storage time Fall time * Pulse test: tp 300 ms; a 0.02. VBEsat Cc Ce fT ton td tr toff ts tf IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IE = iE = 0; VCB = 5 V; f = 1 MHz IC = iC = 0; VEB = 500 mV; f = 1 MHz IC = 20 mA; VCE = 10 V; f = 100 MHz ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA 250 100 Min Transistors Typ Max 50 50 300 400 750 950 1.2 8 30 Unit nA nA mV mV mV V pF pF MHz 35 15 20 250 200 60 ns ns ns ns ns ns Marking Marking 2X 2 www.kexin.com.cn |
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